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FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
February 2010
FDS6898AZ_F085
Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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Features
* 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V RDS(ON) = 18 m @ VGS = 2.5 V
* Low gate charge (16 nC typical) * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
* Qualified to AEC Q101 * RoHS Compliant
D2 D
D2 D
DD1 D1 D
5 6
G1 S1 G
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
7 8
G2 S2 S
S
S
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W
9.4 38 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6898AZ Device Reel Size 13''
1
Tape width 12mm
Quantity 2500 units
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FDS6898AZ_F085
(c)2010 Fairchild Semiconductor Corporation FDS6898AZ_F085 Rev. A
FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V mV/C 1 10 -10 A A A V mV/C m A
Off Characteristics
21
VGS = -12 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 9.4 A VGS = 2.5 V, ID = 8.3 A VGS = 4.5 V, ID = 9.4 A,TJ = 125C VGS = 4.5V, VDS = 5 V VDS = 5 V, VDS = 10 V, f = 1.0 MHz ID = 9.4 A V GS = 0 V, 0.5 1 -3.5 10 13 14 19 47 1821 440 208 VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 10 15 34 16 VDS = 10 V, VGS = 4.5 V ID = 9.4 A, 16 3 4
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
1.5
14 18 21
S pF pF pF 20 27 55 29 23 ns ns ns ns nC nC nC 1.3 A V
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 78C/W when 2 mounted on a 0.5in pad of 2 oz copper
b) 125C/W when mounted on a 0.02 2 in pad of 2 oz copper
c) 135C/W when mounted on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
FDS6898AZ_F085 Rev. A
2
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FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
Typical Characteristics
40 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 2.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 0 10 20 I D, DRAIN CURRENT (A) 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5V 3.0V 4.0V ID, DRAIN CURRENT (A) VGS = 2.0V
30
20
2.0V
10
4.5V
0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.038 RDS(ON) , ON-RESISTANCE (OHM) ID = 4.7A 0.03
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
I D = 9.4A VGS = 4.5V
1.4
1.2
0.022
1
TA = 125oC
0.8
0.014 TA = 25o C 0.006
0.6 -50 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 5V ID, DRAIN CURRENT (A) 30
TA = -55o C
25o C 125o C
10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125oC 25o C -55oC
20
10
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6898AZ_F085 Rev. A
3
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FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 9.4A 8
2500 VDS = 5V 10V CAPACITANCE (pF) 15V CISS f = 1MHz VGS = 0 V
2000
6
1500
4
1000
C OSS
2
500 CRSS
0 0 5 10 15 20 25 30 35 Q g, GATE CHARGE (nC)
0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100s 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135o C/W TA = 25o C P(pk), PEAK TRANSIENT POWER (W) 40
Figure 8. Capacitance Characteristics.
SINGLE PULSE RJA =135C/W TA = 25C
30
1
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 135 C/W
0.1
0.1 0.05 0.02
P(pk) t1 t2
SINGLE PULSE
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t 1 / t 2
0.001 0.0001
0.001
0.01
0.1 t , TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6898AZ_F085 Rev. A
4
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FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FRFET(R) The Power Franchise(R) (R) Auto-SPMTM Global Power ResourceSM PowerXSTM Green FPSTM Build it NowTM Programmable Active DroopTM Green FPSTM e-SeriesTM CorePLUSTM QFET(R) TinyBoostTM QSTM GmaxTM CorePOWERTM TinyBuckTM Quiet SeriesTM GTOTM CROSSVOLTTM TinyCalcTM IntelliMAXTM RapidConfigureTM CTLTM TinyLogic(R) ISOPLANARTM Current Transfer LogicTM TM TINYOPTOTM (R) MegaBuckTM DEUXPEED TinyPowerTM Dual CoolTM Saving our world, 1mW/W/kW at a timeTM MICROCOUPLERTM TinyPWMTM EcoSPARK(R) SignalWiseTM MicroFETTM TinyWireTM EfficentMaxTM SmartMaxTM MicroPakTM TriFault DetectTM SMART STARTTM MicroPak2TM (R) TRUECURRENTTM* MillerDriveTM SPM(R) SerDesTM STEALTHTM MotionMaxTM Fairchild(R) SuperFETTM Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) FACT(R) (R) Ultra FRFETTM (R) OPTOPLANAR SuperSOTTM-8 FAST (R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM FlashWriter(R) * PDP SPMTM XSTM (R)* FPSTM Power-SPMTM F-PFSTM
tm
tm
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I47
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDS6898AZ_F085 Rev. A
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